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Printed electronics can benefit from the deployment of electrolytesas gate insulators,which enables a high gate capacitance per unit area (1–10 μFcm−2) due to the formation of electrical double layers (EDLs). Consequently, electrolyte-gated field-effect transistors (EGFETs) attain high-charge carrier densities already in the subvoltage regime, allowing for low-voltage operation of circuits and systems. This article presents a systematic study of lumped terminal capacitances of printed electrolyte-gated transistors under various dc bias conditions. We perform voltage-dependent impedancemeasurements and separate extrinsic components from the lumped terminal capacitance.
The proposed Meyer-like capacitance model, which also accounts for the nonquasi-static (NQS) effect, agrees well with experimental data. Finally, to verify the model, we implement it in Verilog-A and simulate the transient response of an inverter and a ring oscillator circuit. Simulation results are in good agreement with the measurement data of fabricated devices.
Development of Fully Printed Oxide Field-Effect Transistors using Graphene Passive Structures
(2019)
During the past decade to the present time, the topic of printed electronics has gained a lot of attention for their potential use in a number of practical applications, including biosensors, photovoltaic devices, RFIDs, flexible displays, large-area circuits, and so on. To fully realize printed electronic components and devices, effective techniques for the printing of passive structures and electrically and chemically compatible materials in the printed devices need to be developed first. The opportunity of using electrically conducting graphene inks will enable the integration of passive structures into active devices, as for example, printed electrolyte-gated transistors (EGTs). Accordingly, in this study, we present the parametric results obtained on fully printed electrolyte-gated transistors having graphene as the passive electrodes, an inorganic oxide semiconductor as the active channel, and a composite solid polymer electrolyte (CSPE) as the gate insulating material. This configuration offers high chemical and electrical stability while at the same time allowing EGT operation at low potentials, implying the distinct advantage of operation at low input voltages. The printed in-plane EGTs we developed exhibit excellent performance with device mobility up to 16 cm2 V–1 s–1, an ION/IOFF ratio of 105, and a subthreshold slope of 120 mV dec–1.
Printed electronics (PE) circuits have several advantages over silicon counterparts for the applications where mechanical flexibility, extremely low-cost, large area, and custom fabrication are required. The custom (personalized) fabrication is a key feature of this technology, enabling customization per application, even in small quantities due to low-cost printing compared with lithography. However, the personalized and on-demand fabrication, the non-standard circuit design, and the limited number of printing layers with larger geometries compared with traditional silicon chip manufacturing open doors for new and unique reverse engineering (RE) schemes for this technology. In this paper, we present a robust RE methodology based on supervised machine learning, starting from image acquisition all the way to netlist extraction. The results show that the proposed RE methodology can reverse engineer the PE circuits with very limited manual effort and is robust against non-standard circuit design, customized layouts, and high variations resulting from the inherent properties of PE manufacturing processes.
Electrolyte-gated, printed field-effect transistors exhibit high charge carrier densities in the channel and thus high on-currents at low operating voltages, allowing for the low-power operation of such devices. This behavior is due to the high area-specific capacitance of the device, in which the electrolyte takes the role of the dielectric layer of classical architectures. In this paper, we investigate intrinsic double-layer capacitances of ink-jet printed electrolyte-gated inorganic field-effect transistors in both in-plane and top-gate architectures by means of voltage-dependent impedance spectroscopy. By comparison with deembedding structures, we separate the intrinsic properties of the double-layer capacitance at the transistor channel from parasitic effects and deduce accurate estimates for the double-layer capacitance based on an equivalent circuit fitting. Based on these results, we have performed simulations of the electrolyte cutoff frequency as a function of electrolyte and gate resistances, showing that the top-gate architecture has the potential to reach the kilohertz regime with proper optimization of materials and printing process. Our findings additionally enable accurate modeling of the frequency-dependent capacitance of electrolyte/ion gel-gated devices as required in the small-signal analysis in the circuit simulation.
In the domain of printed electronics (PE), field-effect transistors (FETs) with an oxide semiconductor channel are very promising. In particular, the use of high gate-capacitance of the composite solid polymer electrolytes (CSPEs) as a gate-insulator ensures extremely low voltage requirements. Besides high gate capacitance, such CSPEs are proven to be easily printable, stable in air over wide temperature ranges, and possess high ion conductivity. These CSPEs can be sensitive to moisture, especially for high surface-to-volume ratio printed thin films. In this paper, we provide a comprehensive experimental study on the effect of humidity on CSPE-gated single transistors. At the circuit level, the performance of ring oscillators (ROs) has been compared for various humidity conditions. The experimental results of the electrolyte-gated FETs (EGFETs) demonstrate rather comparable currents between 30%-90% humidity levels. However, the shifted transistor parameters lead to a significant performance change of the RO frequency behavior. The study in this paper shows the need of an impermeable encapsulation for the CSPE-gated FETs to ensure identical performance at all humidity conditions.
Im Beitrag wird für lineare, zeitinvariante, zeitdiskrete und stabile Regelstrecken beschrieben, wie zwei bekannte Zustandsraumverfahren zur Windup-Vermeidung so miteinander kombiniert werden können, dass dadurch für sämtliche PI-Zustandsregler Strecken- und Regler-Windup verhindert wird, sofern diese Regler im unbegrenzten Fall stabil sind. Zurückgegriffen wird hierbei auf das „Additional Dynamic Element“ (ADE) von Hippe zur Vermeidung von Strecken-Windup [Hippe, P.: Windup in control – Its effects and their prevention, 2006; at – Automatisierungstechnik, 2007], dessen Übertragung auf zeitdiskrete Systeme im Beitrag kurz skizziert wird, sowie auf das Verfahren der Führungsgrößenkorrektur [Nuß, U.: at – Automatisierungstechnik, 2017] zur Vermeidung von Regler-Windup. Das vorgestellte Kombinationsverfahren setzt für die jeweilige Regelstrecke lediglich die Einbeziehung eines bereits existierenden P-Zustandsreglers voraus, der Strecken-Windup vermeidet. Die Bereitstellung eines möglichst einfachen und dennoch nicht allzu einschränkenden Kriteriums zur Überprüfung, ob ein P-Zustandsregler diese Eigenschaft besitzt, ist ebenfalls ein Anliegen des Beitrags. Diesbezüglich wird auf der Basis einer geeigneten Ljapunow-Funktion ein hinreichendes Kriterium angegeben, das umfassender ist als das in [Nuß, U.: at – Automatisierungstechnik, 2017] verwendete. Ein Beispiel aus der elektrischen Antriebstechnik demonstriert die Leistungsfähigkeit der vorgestellten Methode.
In many application domains, in particular automotives, guaranteeing a very low failure rate is crucial to meet functional and safety standards. Especially, reliable operation of memory components such as SRAM cells is of essential importance. Due to aggressive technology downscaling, process and runtime variations significantly impact manufacturing yield as well as functionality. For this reason, a thorough memory failure rate assessment is imperative for correct circuit operation and yield improvement. In this regard, Monte Carlo simulations have been used as the conventional method to estimate the variability induced failure rate of memory components. However, Monte Carlo methods become infeasible when estimating rare events such as high-sigma failure rates. To this end, Importance Sampling methods have been proposed which reduce the number of required simulations substantially. However, existing methods still suffer from inaccuracies and high computational efforts, in particular for high-sigma problems. In this paper, we fill this gap by presenting an efficient mixture Importance Sampling approach based on Bayesian optimization, which deploys a surface model of the objective function to find the most probable failure points. Its advantages include constant complexity independent of the dimensions of design space, the potential to find the global extrema, and higher trustworthiness of the estimated failure rate by accurately exploring the design space. The approach is evaluated on a 6T-SRAM cell as well as a master-slave latch based on a 28nm FDSOI process. The results show an improvement in accuracy, resulting in up to 63× better accuracy in estimating failure rates compared to the best state-of-the-art solutions on a 28nm technology node.
Time-Sensitive Networking (TSN) is the most promising time-deterministic wired communication approach for industrial applications. To extend TSN to "IEEE 802.11" wireless networks two challenging problems must be solved: synchronization and scheduling. This paper is focused on the first one. Even though a few solutions already meet the required synchronization accuracies, they are built on expensive hardware that is not suited for mass market products. While next Wi-Fi generation might support the required functionalities, this paper proposes a novel method that makes possible high-precision wireless synchronization using commercial low-cost components. With the proposed solution, a standard deviation of synchronization error of less than 500 ns can be achieved for many use cases and system loads on both CPU and network. This performance is comparable to modern wired real-time field busses, which makes the developed method a significant contribution for the extension of the TSN protocol to the wireless domain.
Amorphous In-Ga-Zn-O (IGZO) is a high-mobility semiconductor employed in modern thin-film transistors for displays and it is considered as a promising material for Schottky diode-based rectifiers. Properties of the electronic components based on IGZO strongly depend on the manufacturing parameters such as the oxygen partial pressure during IGZO sputtering and post-deposition thermal annealing. In this study, we investigate the combined effect of sputtering conditions of amorphous IGZO (In:Ga:Zn=1:1:1) and post-deposition thermal annealing on the properties of vertical thin-film Pt-IGZO-Cu Schottky diodes, and evaluated the applicability of the fabricated Schottky diodes for low-frequency half-wave rectifier circuits. The change of the oxygen content in the gas mixture from 1.64% to 6.25%, and post-deposition annealing is shown to increase the current rectification ratio from 10 5 to 10 7 at ±1 V, Schottky barrier height from 0.64 eV to 0.75 eV, and the ideality factor from 1.11 to 1.39. Half-wave rectifier circuits based on the fabricated Schottky diodes were simulated using parameters extracted from measured current-voltage and capacitance-voltage characteristics. The half-wave rectifier circuits were realized at 100 kHz and 300 kHz on as-fabricated Schottky diodes with active area of 200 μm × 200 μm, which is relevant for the near-field communication (125 kHz - 134 kHz), and provided the output voltage amplitude of 0.87 V for 2 V supply voltage. The simulation results matched with the measurement data, verifying the model accuracy for circuit level simulation.
Analysis of Miniaturized Printed Flexible RFID/NFC Antennas Using Different Carrier Substrates
(2020)
Antennas for Radio Frequency Identification (RFID) provide benefits for high frequencies (HF) and wireless data transmission via Near Field Communication (NFC) and many other applications. In this case, various requirements for the design of the reader and transmitter antennas must be met in order to achieve a suitable transmission quality. In this work, a miniaturized cost-effective RFID/NFC antenna for a microelectronic measurement system is designed and printed on different flexible carrier substrates using a new and low-cost Direct Ink Writing (DIW) technology. Various practical aspects such as reflection and impedance magnitude as well as the behavior of the printed RFID/NFC antennas are analyzed and compared to an identical copper-based antenna of the same size. The results are presented in this paper. Furthermore, the problems during the printing process itself on the different substrates are evaluated. The effects of the characteristics on the antenna under kink-free bending tests are examined and subsequently long-term measurements are carried out.
Advances in printed electronics (PE) enables new applications, particularly in ultra-low-cost domains. However, achieving high-throughput printing processes and manufacturing yield is one of the major challenges in the large-scale integration of PE technology. In this article, we present a programmable printed circuit based on an efficient printed lookup table (pLUT) to address these challenges by combining the advantages of the high-throughput advanced printing and maskless point-of-use final configuration printing. We propose a novel pLUT design which is more efficient in PE realization compared to existing LUT designs. The proposed pLUT design is simulated, fabricated, and programmed as different logic functions with inkjet printed conductive ink to prove that it can realize digital circuit functionality with the use of programmability features. The measurements show that the fabricated LUT design is operable at 1 V.
Diese Arbeit beschäftigt sich mit der Biomechanik der Halswirbelsäule (HWS) beim Umgang mit dem Smartphone. Die Kräfte, die auf Wirbelkörper, Wirbelgelenke, Bandscheiben, Muskeln und Bänder wirken, werden mit steigendem Flexionswinkel der HWS größer. Die Beschwerden hingegen, welche der Smartphone-Nacken hervorruft, sind meist akut und mit regelmäßiger Bewegung und der Stärkung der Nackenmuskulatur gut zu behandeln. Eine Therapie ist somit auch zur Vorbeugung geeignet. Doch die Langzeitauswirkungen sind nicht außer Acht zu lassen, denn durch die steigenden Nutzungsmöglichkeiten der Smartphones steigt auch der durchschnittliche tägliche Gebrauch stärker an. So wird vor allem die tägliche Bildschirmzeit bei Jugendlichen immer länger. Das aktuell noch akute Krankheitsbild des Smartphone-Nackens, das nur selten einen chronischen Verlauf nimmt und Langzeitschäden verursacht, könnte sich durch fehlende oder zu späte Maßnahmen zu einem größeren chronischen Krankheitsbild entwickeln.
In this report, we have studied field-effect transistors (FETs) using low-density alumina for electrolytic gating. Device layers have been prepared starting from the structured ITO glasses by printing the In 2 O 3 channels, low-temperature atomic layer deposition (ALD) of alumina (Al 2 O 3 ), and printing graphene top gates. The transistor performance could be deliberately changed by alternating the ambient humidity; furthermore, ID,ON/ID,OFF-ratios of up to seven orders of magnitude and threshold voltages between 0.66 and 0.43 V, decreasing with an increasing relative humidity between 40% and 90%, could be achieved. In contrast to the common usage of Al 2 O 3 as the dielectric in the FETs, our devices show electrolyte-typegating behavior. This is a result from the formation of protons on the Al 2 O 3 surfaces at higher humidities. Due to the very high local capacitances of the Helmholtz double layers at the channel surfaces, the operation voltage can be as low as 1 V. At low humidities (≤30%), the solid electrolyte dries out and the performance breaks down; however, it can fully reversibly be regained upon a humidity increase. Using ALD-derived alumina as solid electrolyte gating material, thus, allows low-voltage operation and provides a chemically stable gating material while maintaining low process temperatures. However, it has proven to be highly humidity-dependent in its performance.
Rectifiersare vital electronic circuits for signal and power conversion in various smart sensor applications. The ability to process low input voltage levels, for example, from vibrational energy harvesters is a major challenge with existing passive rectifiers in printed electronics, stemming mainly from the built-in potential of the diode's p-njunction. To address this problem, in this work, we design, fabricate, and characterize an inkjet-printed full-wave rectifier using diode-connected electrolyte-gated thin-film transistors (EGTs). Using both experimental and simulation approaches, we investigate how the rectifier can benefit from the near-zero threshold voltage of transistors, which can be enabled by proper channel geometry setting in EGT technology. The presented circuit can be operated at 1-V input voltage, featuring a remarkably small voltage loss of 140 mV and a cutoff frequency of ~300 Hz. Below the cutoff frequency, more than 2.6-μW dc power is obtained over the load resistances ranging from 5 to 20 kQ. Furthermore, experiments show that the circuit can work with an input amplitude down to 500 mV. This feature makes the presented design highly suitable for a variety of energy-harvesting applications.
Printed electronics (PE) enables disruptive applications in wearables, smart sensors, and healthcare since it provides mechanical flexibility, low cost, and on-demand fabrication. The progress in PE raises trust issues in the supply chain and vulnerability to reverse engineering (RE) attacks. Recently, RE attacks on PE circuits have been successfully performed, pointing out the need for countermeasures against RE, such as camouflaging. In this article, we propose a printed camouflaged logic cell that can be inserted into PE circuits to thwart RE. The proposed cell is based on three components achieved by changing the fabrication process that exploits the additive manufacturing feature of PE. These components are optically look-alike, while their electrical behaviors are different, functioning as a transistor, short, and open. The properties of the proposed cell and standard PE cells are compared in terms of voltage swing, delay, power consumption, and area. Moreover, the proposed camouflaged cell is fabricated and characterized to prove its functionality. Furthermore, numerous camouflaged components are fabricated, and their (in)distinguishability is assessed to validate their optical similarities based on the recent RE attacks on PE. The results show that the proposed cell is a promising candidate to be utilized in camouflaging PE circuits with negligible overhead.
Electrolyte-gated thin-film transistors (EGTs) with indium oxide channel, and expected lifetime of three months, enable low-voltage operation (~1 V) in the field of printed electronics (PEs). The channel width of our printed EGTs is varied between 200 and 1000 μm, whereas a channel length between 10 and 100 μm is used. Due to the lack of uniform performance p-type metal oxide semiconductors, n-type EGTs and passive elements are used to design circuits. For logic gates, transistor-resistor logic has been employed so far, but depletion and enhancement-mode EGTs in a transistor-transistor logic boost the circuit performance in terms of delay and signal swing. In this article, the threshold voltage of the EGT, which determines the operation mode, is tuned through sizing of the EGTs channel geometry. The feasibility of both transistor operation modes is demonstrated for logic gates and ring oscillators. An inverter operating at a supply voltage of 1 V shows a maximum gain of 9.6 and a propagation delay time of 0.7 ms, which represents an improvement of ~ 2x for the gain and oscillation frequency, in comparison with the resistor-transistor logic design. Moreover, the power consumption is reduced by 6x.
High-performance Ag–Se-based n-type printed thermoelectric (TE) materials suitable for room-temperature applications have been developed through a new and facile synthesis approach. A high magnitude of the Seebeck coefficient up to 220 μV K–1 and a TE power factor larger than 500 μW m–1 K–2 for an n-type printed film are achieved. A high figure-of-merit ZT ∼0.6 for a printed material has been found in the film with a low in-plane thermal conductivity κF of ∼0.30 W m–1 K–1. Using this material for n-type legs, a flexible folded TE generator (flexTEG) of 13 thermocouples has been fabricated. The open-circuit voltage of the flexTEG for temperature differences of ΔT = 30 and 110 K is found to be 71.1 and 181.4 mV, respectively. Consequently, very high maximum output power densities pmax of 6.6 and 321 μW cm–2 are estimated for the temperature difference of ΔT = 30 K and ΔT = 110 K, respectively. The flexTEG has been demonstrated by wearing it on the lower wrist, which resulted in an output voltage of ∼72.2 mV for ΔT ≈ 30 K. Our results pave the way for widespread use in wearable devices.
Printed Electronics technology is a key-enabler for smart sensors, soft robotics, and wearables. The inkjet printed electrolyte-gated field effect transistor (EGFET) technology is a promising candidate for such applications due to its low-power operation, high field-effect mobility, and on-demand fabrication. Unlike conventional silicon-based technologies, inkjet printed electronics technology is an additive manufacturing process where multiple layers are printed on top of each other to realize functional devices such as transistors and their interconnections. Due to the additive manufacturing process, the technology has limited routing layers. For routing of complex circuits, insulating crossovers are printed at the intersection of routing paths to isolate them. The crossover can alter the electrical properties of a circuit based on specific location on a routing path. In this work, we propose a crossover-aware placement and routing (COPnR) methodology for inkjet-printed circuits by integrating the crossover constraints in our design framework. Our proposed placement methodology is based on a state-of-the-art evolutionary algorithm while the routing optimization is done using a genetic algorithm. The proposed methodology is compared with the industrial standard placement and routing (PnR) tools. On average, the proposed methodology has 38% fewer crossovers and 94% fewer failing paths compared to the industrial PnR tools applied to printed circuit designs.
Morphological transition of a rod-shaped phase into a string of spherical particles is commonly observed in the microstructures of alloys during solidification (Ratke and Mueller, 2006). This transition phenomenon can be explained by the classic Plateau-Rayleigh theory which was derived for fluid jets based on the surface area minimization principle. The quintessential work of Plateau-Rayleigh considers tiny perturbations (amplitude much less than the radius) to the continuous phase and for large amplitude perturbations, the breakup condition for the rod-shaped phase is still a knotty issue. Here, we present a concise thermodynamic model based on the surface area minimization principle as well as a non-linear stability analysis to generalize Plateau-Rayleigh’s criterion for finite amplitude perturbations. Our results demonstrate a breakup transition from a continuous phase via dispersed particles towards a uniform-radius cylinder, which has not been found previously, but is observed in our phase-field simulations. This new observation is attributed to a geometric constraint, which was overlooked in former studies. We anticipate that our results can provide further insights on microstructures with spherical particles and cylinder-shaped phases.
In der vorliegenden Arbeit werden fotografische Aufnahmen zweier verschiedener Abgüsse von Paganinis rechter Hand vorgestellt und näher beschrieben. Es handelt sich um einen mutmaßlich originalen Bronzeabguss, der vermutlich kurz nach Paganinis Tod auf dessen Totenbett abgenommen wurde, und eine in heutiger Zeit angefertigte Kopie aus Fiberplastik mit goldfarbenem Anstrich. Die Hand ist im proximalen Handgelenk stark abgewinkelt, was dafür spricht, dass die Hand des Toten auf einem Kissen gelegen haben könnte, um den Abguss vorzunehmen. Überdies zeigt sich eine verkrampfte Stellung der Finger und Hand, am ehesten infolge Totenstarre. Man findet zudem arthrotische Veränderungen sowie hervortretende Sehnen und atrophierte Muskulatur. Beim Bronzeabguss sind die beschriebenen Auffälligkeiten deutlicher zu erkennen. Ein 3D-Scan des Bronzeabgusses der rechten Hand Paganinis mit einem Strukturlichtscanner würde die Möglichkeit eröffnen, Messdaten der Hand zu erhalten.
Neurostimulation durch Musik
(2020)
Was ist die Musik und wie wirkt sie sich auf den menschlichen Körper aus? Historisch betrachtet wird die Musik als etwas Göttliches aufgefasst, da sie eine äußerst große Wirkung auf die Emotionen des Menschen besitzt. Dieser Effekt wirkt sich auch psychosomatisch aus und kann das Denken und Handeln des Zuhörers beeinflussen und steuern. So lässt sich beispielsweise das Kaufverhalten allein durch die musikalische Begleitung deutlich manipulieren. Selbst die Motivation lässt sich mit passender Vertonung entweder steigern oder reduzieren. In der heutigen Zivilisation begleitet die Musik den Menschen alltäglich und wird zu vielen verschiedenen Zwecken verwendet. Somit ist die musikalische Stimulation als eine Art Psychotherapie zu werten, die häufig gezielt angewendet wird, aber im Beeinflussten unterbewusst stattfindet. Da natürlich immer noch offene Fragen bezüglich der genauen Wirkung von Musik auf das Gehirn bestehen, werden derzeit im Bereich der Neurowissenschaften viele Studien durchgeführt, um dieses Phänomen nachvollziehen zu können.
In der vorliegenden Arbeit wurde die von Wilhelm His Sr. angefertigte und im Jahr 1895 publizierte Fotografie des mutmaßlichen Skeletts von Johann Sebastian Bach auf ihre Abbildungsqualität untersucht. Dies erfolgte durch direkte Messungen an einem digitalen Scan der Fotografie. Dabei wurde der von His der Fotografie beigelegte Lineal-Maßstab in mehrere 10-cm-Stücke unterteilt und die Länge dieser Abschnitte im Digitalisat mit dem Messinstrument von Adobe Acrobat ausgemessen. Darüber hinaus wurden die Längen der Femora ermittelt und mit den Maßen verglichen, die 1895 an den tatsächlichen (realen) Knochen ermittelt wurden. In dem Digitalisat entsprachen 190 cm im Lineal 244,48 mm. Der Mittelwert der 19 bestimmten 10-cm-Abschnitte betrug 100,49 mm (Median 100,49 mm, Standardabweichung 0,49 mm). Die historische Femurlänge links betrug 443,5 mm, rechts 451,0 mm. Die im Digitalisat ermittelte Femurlänge betrug links 443,8 mm, rechts 451,1 mm. Zusätzlich wurden die projizierten Centrum-Collum-Diaphysen-Winkel bestimmt. Die Daten lassen den Schluss zu, dass die Oben/unten-Verzerrung sowie die Rechts/links-Verzerrung nicht nennenswert sind und das von His angefertigte Foto mit einer hohen Genauigkeit der Abbildungsqualität und des Linsenapparats der Kamera angefertigt wurde, die es ermöglicht, bestimmte Skelettanteile aussagekräftig zu beurteilen und auszumessen.
Oxide semiconductors have the potential to increase the performance of inkjet printed microelectronic devices such as field-effect transistors (FETs), due to their high electron mobilities. Typical metal oxides are n-type semiconductors, while p-type oxides, although realizable, exhibit lower carriermobilities. Therefore, the circuit design based on oxide semiconductors is mostly in n-type logic only. Here we present an inkjet printed pn-diode based on p- and n-type oxide semiconductors.Copper oxide or nickel oxide is used as p-typesemiconductor whereas n-typesemiconductor is realized with indium oxide. Themeasurements show that the pn-diodes operate in the voltage window typical for printed electronics and the emission coefficient is 1.505 and 2.199 for the copper oxide based and nickel oxidebased pn-diode, respectively.Furthermore, a pn-diode model is developed and integrable into a circuit simulator.
Fünf Jahre vor seinem Tod, im Jahr 1932, wurde der berühmte französische Komponist Maurice Ravel (1875–1937), der an einer frontotemporalen Demenz (M. Pick) mit primär progressiver Aphasie litt, bei einem Unfall verletzt, als er in einem Pariser Taxi saß. In diesem Fallbericht wird der Unfallmechanismus unter bestimmten Annahmen dargestellt und diskutiert. Ausgehend von diesen Überlegungen ist ein Unfall bei geringer Kollisionsgeschwindigkeit wahrscheinlich. Trotz eines Unfalls mit nur geringer Geschwindigkeit ist nicht von der Hand zu weisen, dass dieser Unfall zumindest zu einer deutlichen Verschlimmerung der Krankheitssymptome geführt haben könnte, da Ravel seit diesem Taxiunfall bis zu seinem Tod keine weiteren Kompositionen mehr vollendet hat.
In dieser Arbeit wird ein historischer Fallbericht des bis heute weit über seine Landesgrenzen bekannten italienischen Kriminalanthropologen Cesare Lombroso (1835–1909) vorgestellt. In diesem Fallbericht wird der berüchtigte und psychisch auffällige Dieb Pietro Bersone mit Hilfe eines sog. Hydrosphygmographen überführt, einem zur damaligen Zeit neuartigen technischen Gerät, das den Puls nicht-invasiv aufzeichnen konnte. Lombroso ist vermutlich einer der ersten, wenn nicht sogar der erste, der durch den Einsatz eines solchen Geräts die Idee zum „Lügendetektor“ vorweggenommen hat. Die vorgestellte Textstelle aus Lombrosos Buch „Neue Fortschritte in den Verbrecherstudien“ ist daher ein besonderes Fundstück auch für die Geschichte der Polygraphie.
The increasing use of artificial intelligence (AI) technologies across application domains has prompted our society to pay closer attention to AI’s trustworthiness, fairness, interpretability, and accountability. In order to foster trust in AI, it is important to consider the potential of interactive visualization, and how such visualizations help build trust in AI systems. This manifesto discusses the relevance of interactive visualizations and makes the following four claims: i) trust is not a technical problem, ii) trust is dynamic, iii) visualization cannot address all aspects of trust, and iv) visualization is crucial for human agency in AI.
Die vorliegende Arbeit gibt einen Überblick über das Verhältnis zwischen Nutzen und Einschränkungen eines frühneuzeitlichen Riefelharnisches auf die Biomechanik des Menschen. Zu den zentralen Ergebnissen gehört, dass die Rüstung eine gewisse Einschränkung der Beweglichkeit bringt, jedoch durch verschiedene mechanische Konzepte versucht wurde, diese größtmöglich zu minimieren. Besonders das sogenannte Geschübe stellt hierbei einen Kompromiss zwischen Beweglichkeit und Schutzfunktion dar und findet vor allem im Bereich der Gelenke Anwendung. Steife Strukturen werden an Stellen eingesetzt, die kaum Bewegungsfreiheit fordern. Zu diesen Bereichen gehören beispielsweise der Brustkorb oder obere Teile des Rückens. Der Vorteil der steiferen Teile der Rüstung ist ihre erhöhte Schutzfunktion, die ein geringeres Verletzungsrisiko mit sich bringt.
In the last decade, deep learning models for condition monitoring of mechanical systems increasingly gained importance. Most of the previous works use data of the same domain (e.g., bearing type) or of a large amount of (labeled) samples. This approach is not valid for many real-world scenarios from industrial use-cases where only a small amount of data, often unlabeled, is available.
In this paper, we propose, evaluate, and compare a novel technique based on an intermediate domain, which creates a new representation of the features in the data and abstracts the defects of rotating elements such as bearings. The results based on an intermediate domain related to characteristic frequencies show an improved accuracy of up to 32 % on small labeled datasets compared to the current state-of-the-art in the time-frequency domain.
Furthermore, a Convolutional Neural Network (CNN) architecture is proposed for transfer learning. We also propose and evaluate a new approach for transfer learning, which we call Layered Maximum Mean Discrepancy (LMMD). This approach is based on the Maximum Mean Discrepancy (MMD) but extends it by considering the special characteristics of the proposed intermediate domain. The presented approach outperforms the traditional combination of Hilbert–Huang Transform (HHT) and S-Transform with MMD on all datasets for unsupervised as well as for semi-supervised learning. In most of our test cases, it also outperforms other state-of-the-art techniques.
This approach is capable of using different types of bearings in the source and target domain under a wide variation of the rotation speed.
It is important to minimize the unscheduled downtime of machines caused by outages of machine components in highly automated production lines. Considering machine tools such as, grinding machines, the bearing inside of spindles is one of the most critical components. In the last decade, research has increasingly focused on fault detection of bearings. In addition, the rise of machine learning concepts has also intensified interest in this area. However, up to date, there is no single one-fits-all solution for predictive maintenance of bearings. Most research so far has only looked at individual bearing types at a time.
This paper gives an overview of the most important approaches for bearing-fault analysis in grinding machines. There are two main parts of the analysis presented in this paper. The first part presents the classification of bearing faults, which includes the detection of unhealthy conditions, the position of the error (e.g. at the inner or at the outer ring of the bearing) and the severity, which detects the size of the fault. The second part presents the prediction of remaining useful life, which is important for estimating the productive use of a component before a potential failure, optimizing the replacement costs and minimizing downtime.
Interpreting seismic data requires the characterization of a number of key elements such as the position of faults and main reflections, presence of structural bodies, and clustering of areas exhibiting a similar amplitude versus angle response. Manual interpretation of geophysical data is often a difficult and time-consuming task, complicated by lack of resolution and presence of noise. In recent years, approaches based on convolutional neural networks have shown remarkable results in automating certain interpretative tasks. However, these state-of-the-art systems usually need to be trained in a supervised manner, and they suffer from a generalization problem. Hence, it is highly challenging to train a model that can yield accurate results on new real data obtained with different acquisition, processing, and geology than the data used for training. In this work, we introduce a novel method that combines generative neural networks with a segmentation task in order to decrease the gap between annotated training data and uninterpreted target data. We validate our approach on two applications: the detection of diffraction events and the picking of faults. We show that when transitioning from synthetic training data to real validation data, our workflow yields superior results compared to its counterpart without the generative network.
Memento mori!
(2022)
Das plötzliche Ende des romantischen Komponisten Felix Mendelssohn Bartholdy (1809–1847) gibt uns auch heute noch Rätsel auf. Einiges deutet auf ein rupturiertes zerebrales Aneurysma mit konsekutiver Subarachnoidalblutung hin. Das Quellenmaterial zu den Symptomen seiner Todeskrankheit wird in dieser Arbeit ausführlich vorgestellt und diskutiert. Eine mögliche familiäre Disposition im Sinne eines Ehlers-Danlos-Syndroms Typ IV wird erörtert.