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Bei bimodaler Cochlea-Implantat-/Hörgerät-Versorgung kann es aufgrund seitenverschiedener Signalverarbeitung zu einer zeitlich versetzten Stimulation der beiden Modalitäten kommen. Jüngste Studien haben gezeigt, dass durch zeitlichen Abgleich der Modalitäten die Schalllokalisation bei bimodaler Versorgung verbessert werden kann. Um solch einen Abgleich vornehmen zu können, ist die messtechnische Bestimmung der Durchlaufzeit von Hörgeräten erforderlich. Kommerziell verfügbare Hörgerätemessboxen können diese Werte häufig liefern. Die dazu verwendete Signalverarbeitung wird dabei aber oft nicht vollständig offengelegt. In dieser Arbeit wird ein alternativer und nachvollziehbarer Ansatz zum Design eines simplen Messaufbaus basierend auf einem Arduino DUE Mikrocontroller-Board vorgestellt. Hierzu wurde ein Messtisch im 3D-Druck gefertigt, auf welchem Hörgeräte über einen 2-ccm-Kuppler an ein Messmikrofon angeschlossen werden können. Über einen Latenzvergleich mit dem simultan erfassten Signal eines Referenzmikrofons kann die Durchlaufzeit von Hörgeräten bestimmt werden. Frequenzspezifische Durchlaufzeiten werden mittels einer Kreuzkorrelation zwischen Ziel- und Referenzsignal errechnet. Aufnahme, Ausgabe und Speicherung der Signale erfolgt über einen ATMEL SAM3X8E Mikrocontroller, welcher auf dem Arduino DUE-Board verbaut ist. Über eigens entworfene elektronische Schaltungen werden die Mikrofone und der verwendete Lautsprecher angesteuert. Nach Abschluss einer Messung (Messdauer ca. 5 s) werden die Messdaten seriell an einen PC übertragen, auf dem die Datenauswertung mittels MATLAB erfolgt. Erste Validierungen zeigten eine hohe Stabilität der Messergebnisse mit sehr geringen Standardabweichungen im Bereich weniger Mikrosekunden für Pegel zwischen 50 und 75 dB (A). Der Messaufbau wird in laufenden Studien zur Quantifizierung der Durchlaufzeit von Hörgeräten verwendet.
Experimental Investigation of the Air Exchange Effectiveness of Push-Pull Ventilation Devices
(2020)
The increasing installation numbers of ventilation units in residential buildings are driven by legal objectives to improve their energy efficiency. The dimensioning of a ventilation system for nearly zero energy buildings is usually based on the air flow rate desired by the clients or requested by technical regulations. However, this does not necessarily lead to a system actually able to renew the air volume of the living space effectively. In recent years decentralised systems with an alternating operation mode and fairly good energy efficiencies entered the market and following question was raised: “Does this operation mode allow an efficient air renewal?” This question can be answered experimentally by performing a tracer gas analysis. In the presented study, a total of 15 preliminary tests are carried out in a climatic chamber representing a single room equipped with two push-pull devices. The tests include summer, winter and isothermal supply air conditions since this parameter variation is missing till now for push-pull devices. Further investigations are dedicated to the effect of thermal convection due to human heat dissipation on the room air flow. In dependence on these boundary conditions, the determined air exchange efficiency varies, lagging behind the expected range 0.5 < εa < 1 in almost all cases, indicating insufficient air exchange including short-circuiting. Local air exchange values suggest inhomogeneous air renewal depending on the distance to the indoor apertures as well as the temperature gradients between in- and outdoor. The tested measurement set-up is applicable for field measurements.
Electrolyte-gated thin-film transistors (EGTs) with indium oxide channel, and expected lifetime of three months, enable low-voltage operation (~1 V) in the field of printed electronics (PEs). The channel width of our printed EGTs is varied between 200 and 1000 μm, whereas a channel length between 10 and 100 μm is used. Due to the lack of uniform performance p-type metal oxide semiconductors, n-type EGTs and passive elements are used to design circuits. For logic gates, transistor-resistor logic has been employed so far, but depletion and enhancement-mode EGTs in a transistor-transistor logic boost the circuit performance in terms of delay and signal swing. In this article, the threshold voltage of the EGT, which determines the operation mode, is tuned through sizing of the EGTs channel geometry. The feasibility of both transistor operation modes is demonstrated for logic gates and ring oscillators. An inverter operating at a supply voltage of 1 V shows a maximum gain of 9.6 and a propagation delay time of 0.7 ms, which represents an improvement of ~ 2x for the gain and oscillation frequency, in comparison with the resistor-transistor logic design. Moreover, the power consumption is reduced by 6x.
Oxide semiconductors have the potential to increase the performance of inkjet printed microelectronic devices such as field-effect transistors (FETs), due to their high electron mobilities. Typical metal oxides are n-type semiconductors, while p-type oxides, although realizable, exhibit lower carriermobilities. Therefore, the circuit design based on oxide semiconductors is mostly in n-type logic only. Here we present an inkjet printed pn-diode based on p- and n-type oxide semiconductors.Copper oxide or nickel oxide is used as p-typesemiconductor whereas n-typesemiconductor is realized with indium oxide. Themeasurements show that the pn-diodes operate in the voltage window typical for printed electronics and the emission coefficient is 1.505 and 2.199 for the copper oxide based and nickel oxidebased pn-diode, respectively.Furthermore, a pn-diode model is developed and integrable into a circuit simulator.
Printed electronics (PE) is a fast-growing field with promising applications in wearables, smart sensors, and smart cards, since it provides mechanical flexibility, and low-cost, on-demand, and customizable fabrication. To secure the operation of these applications, true random number generators (TRNGs) are required to generate unpredictable bits for cryptographic functions and padding. However, since the additive fabrication process of the PE circuits results in high intrinsic variations due to the random dispersion of the printed inks on the substrate, constructing a printed TRNG is challenging. In this article, we exploit the additive customizable fabrication feature of inkjet printing to design a TRNG based on electrolyte-gated field-effect transistors (EGFETs). We also propose a printed resistor tuning flow for the TRNG circuit to mitigate the overall process variation of the TRNG so that the generated bits are mostly based on the random noise in the circuit, providing a true random behavior. The simulation results show that the overall process variation of the TRNGs is mitigated by 110 times, and the generated bitstream of the tuned TRNGs passes the National Institute of Standards and Technology - Statistical Test Suite. For the proof of concept, the proposed TRNG circuit was fabricated and tuned. The characterization results of the tuned TRNGs prove that the TRNGs generate random bitstreams at the supply voltage of down to 0.5 V. Hence, the proposed TRNG design is suitable to secure low-power applications in this domain.
Printed electronics (PE) enables disruptive applications in wearables, smart sensors, and healthcare since it provides mechanical flexibility, low cost, and on-demand fabrication. The progress in PE raises trust issues in the supply chain and vulnerability to reverse engineering (RE) attacks. Recently, RE attacks on PE circuits have been successfully performed, pointing out the need for countermeasures against RE, such as camouflaging. In this article, we propose a printed camouflaged logic cell that can be inserted into PE circuits to thwart RE. The proposed cell is based on three components achieved by changing the fabrication process that exploits the additive manufacturing feature of PE. These components are optically look-alike, while their electrical behaviors are different, functioning as a transistor, short, and open. The properties of the proposed cell and standard PE cells are compared in terms of voltage swing, delay, power consumption, and area. Moreover, the proposed camouflaged cell is fabricated and characterized to prove its functionality. Furthermore, numerous camouflaged components are fabricated, and their (in)distinguishability is assessed to validate their optical similarities based on the recent RE attacks on PE. The results show that the proposed cell is a promising candidate to be utilized in camouflaging PE circuits with negligible overhead.
Advances in printed electronics (PE) enables new applications, particularly in ultra-low-cost domains. However, achieving high-throughput printing processes and manufacturing yield is one of the major challenges in the large-scale integration of PE technology. In this article, we present a programmable printed circuit based on an efficient printed lookup table (pLUT) to address these challenges by combining the advantages of the high-throughput advanced printing and maskless point-of-use final configuration printing. We propose a novel pLUT design which is more efficient in PE realization compared to existing LUT designs. The proposed pLUT design is simulated, fabricated, and programmed as different logic functions with inkjet printed conductive ink to prove that it can realize digital circuit functionality with the use of programmability features. The measurements show that the fabricated LUT design is operable at 1 V.
Rectifiersare vital electronic circuits for signal and power conversion in various smart sensor applications. The ability to process low input voltage levels, for example, from vibrational energy harvesters is a major challenge with existing passive rectifiers in printed electronics, stemming mainly from the built-in potential of the diode's p-njunction. To address this problem, in this work, we design, fabricate, and characterize an inkjet-printed full-wave rectifier using diode-connected electrolyte-gated thin-film transistors (EGTs). Using both experimental and simulation approaches, we investigate how the rectifier can benefit from the near-zero threshold voltage of transistors, which can be enabled by proper channel geometry setting in EGT technology. The presented circuit can be operated at 1-V input voltage, featuring a remarkably small voltage loss of 140 mV and a cutoff frequency of ~300 Hz. Below the cutoff frequency, more than 2.6-μW dc power is obtained over the load resistances ranging from 5 to 20 kQ. Furthermore, experiments show that the circuit can work with an input amplitude down to 500 mV. This feature makes the presented design highly suitable for a variety of energy-harvesting applications.
Diese Arbeit beschäftigt sich mit der Biomechanik der Halswirbelsäule (HWS) beim Umgang mit dem Smartphone. Die Kräfte, die auf Wirbelkörper, Wirbelgelenke, Bandscheiben, Muskeln und Bänder wirken, werden mit steigendem Flexionswinkel der HWS größer. Die Beschwerden hingegen, welche der Smartphone-Nacken hervorruft, sind meist akut und mit regelmäßiger Bewegung und der Stärkung der Nackenmuskulatur gut zu behandeln. Eine Therapie ist somit auch zur Vorbeugung geeignet. Doch die Langzeitauswirkungen sind nicht außer Acht zu lassen, denn durch die steigenden Nutzungsmöglichkeiten der Smartphones steigt auch der durchschnittliche tägliche Gebrauch stärker an. So wird vor allem die tägliche Bildschirmzeit bei Jugendlichen immer länger. Das aktuell noch akute Krankheitsbild des Smartphone-Nackens, das nur selten einen chronischen Verlauf nimmt und Langzeitschäden verursacht, könnte sich durch fehlende oder zu späte Maßnahmen zu einem größeren chronischen Krankheitsbild entwickeln.
This work compares the performance of Bluetooth Mesh implementations on real chipsets against the ideal implementation of the specification. Measurements are taken in experimental settings and reveal non-idealities in the underlying Bluetooth Low Energy specification in real chipsets and in the implementation of Mesh, which introduces an unruly transmission as well as reception behavior. These effects lead to an impact on transmission rate, reception rate, latency, as well as a more significant impact on the average power consumption.
In this study, a facile method to fabricate a cohesive ion‐gel based gate insulator for electrolyte‐gated transistors is introduced. The adhesive and flexible ion‐gel can be laminated easily on the semiconducting channel and electrode manually by hand. The ion‐gel is synthesized by a straightforward technique without complex procedures and shows a remarkable ionic conductivity of 4.8 mS cm−1 at room temperature. When used as a gate insulator in electrolyte‐gated transistors (EGTs), an on/off current ratio of 2.24×104 and a subthreshold swing of 117 mV dec−1 can be achieved. This performance is roughly equivalent to that of ink drop‐casted ion‐gels in electrolyte‐gated transistors, indicating that the film‐attachment method might represent a valuable alternative to ink drop‐casting for the fabrication of gate insulators.
Neurostimulation durch Musik
(2020)
Was ist die Musik und wie wirkt sie sich auf den menschlichen Körper aus? Historisch betrachtet wird die Musik als etwas Göttliches aufgefasst, da sie eine äußerst große Wirkung auf die Emotionen des Menschen besitzt. Dieser Effekt wirkt sich auch psychosomatisch aus und kann das Denken und Handeln des Zuhörers beeinflussen und steuern. So lässt sich beispielsweise das Kaufverhalten allein durch die musikalische Begleitung deutlich manipulieren. Selbst die Motivation lässt sich mit passender Vertonung entweder steigern oder reduzieren. In der heutigen Zivilisation begleitet die Musik den Menschen alltäglich und wird zu vielen verschiedenen Zwecken verwendet. Somit ist die musikalische Stimulation als eine Art Psychotherapie zu werten, die häufig gezielt angewendet wird, aber im Beeinflussten unterbewusst stattfindet. Da natürlich immer noch offene Fragen bezüglich der genauen Wirkung von Musik auf das Gehirn bestehen, werden derzeit im Bereich der Neurowissenschaften viele Studien durchgeführt, um dieses Phänomen nachvollziehen zu können.
Diffracted waves carry high‐resolution information that can help interpreting fine structural details at a scale smaller than the seismic wavelength. However, the diffraction energy tends to be weak compared to the reflected energy and is also sensitive to inaccuracies in the migration velocity, making the identification of its signal challenging. In this work, we present an innovative workflow to automatically detect scattering points in the migration dip angle domain using deep learning. By taking advantage of the different kinematic properties of reflected and diffracted waves, we separate the two types of signals by migrating the seismic amplitudes to dip angle gathers using prestack depth imaging in the local angle domain. Convolutional neural networks are a class of deep learning algorithms able to learn to extract spatial information about the data in order to identify its characteristics. They have now become the method of choice to solve supervised pattern recognition problems. In this work, we use wave equation modelling to create a large and diversified dataset of synthetic examples to train a network into identifying the probable position of scattering objects in the subsurface. After giving an intuitive introduction to diffraction imaging and deep learning and discussing some of the pitfalls of the methods, we evaluate the trained network on field data and demonstrate the validity and good generalization performance of our algorithm. We successfully identify with a high‐accuracy and high‐resolution diffraction points, including those which have a low signal to noise and reflection ratio. We also show how our method allows us to quickly scan through high dimensional data consisting of several versions of a dataset migrated with a range of velocities to overcome the strong effect of incorrect migration velocity on the diffraction signal.
Extracting horizon surfaces from key reflections in a seismic image is an important step of the interpretation process. Interpreting a reflection surface in a geologically complex area is a difficult and time-consuming task, and it requires an understanding of the 3D subsurface geometry. Common methods to help automate the process are based on tracking waveforms in a local window around manual picks. Those approaches often fail when the wavelet character lacks lateral continuity or when reflections are truncated by faults. We have formulated horizon picking as a multiclass segmentation problem and solved it by supervised training of a 3D convolutional neural network. We design an efficient architecture to analyze the data over multiple scales while keeping memory and computational needs to a practical level. To allow for uncertainties in the exact location of the reflections, we use a probabilistic formulation to express the horizons position. By using a masked loss function, we give interpreters flexibility when picking the training data. Our method allows experts to interactively improve the results of the picking by fine training the network in the more complex areas. We also determine how our algorithm can be used to extend horizons to the prestack domain by following reflections across offsets planes, even in the presence of residual moveout. We validate our approach on two field data sets and show that it yields accurate results on nontrivial reflectivity while being trained from a workable amount of manually picked data. Initial training of the network takes approximately 1 h, and the fine training and prediction on a large seismic volume take a minute at most.
Modern Franciscan Leadership
(2020)
This article combines two important areas of practical theology: Monastic rules and leadership in a cloistral organisation, using the Rule of Saint Francis as a prominent example. The aim of this research is to examine how living Christian tradition in a monastic order affects leadership today, discovering how the Rule and Franciscan spirituality impact managing a convent. The research question is answered within this inductive research applying the methodology of the ‘theology in four voices.’ Based on the results, it is possible to build a coherent leadership system based on Biblical and Franciscan sources.
Analysis of Miniaturized Printed Flexible RFID/NFC Antennas Using Different Carrier Substrates
(2020)
Antennas for Radio Frequency Identification (RFID) provide benefits for high frequencies (HF) and wireless data transmission via Near Field Communication (NFC) and many other applications. In this case, various requirements for the design of the reader and transmitter antennas must be met in order to achieve a suitable transmission quality. In this work, a miniaturized cost-effective RFID/NFC antenna for a microelectronic measurement system is designed and printed on different flexible carrier substrates using a new and low-cost Direct Ink Writing (DIW) technology. Various practical aspects such as reflection and impedance magnitude as well as the behavior of the printed RFID/NFC antennas are analyzed and compared to an identical copper-based antenna of the same size. The results are presented in this paper. Furthermore, the problems during the printing process itself on the different substrates are evaluated. The effects of the characteristics on the antenna under kink-free bending tests are examined and subsequently long-term measurements are carried out.
High-performance Ag–Se-based n-type printed thermoelectric (TE) materials suitable for room-temperature applications have been developed through a new and facile synthesis approach. A high magnitude of the Seebeck coefficient up to 220 μV K–1 and a TE power factor larger than 500 μW m–1 K–2 for an n-type printed film are achieved. A high figure-of-merit ZT ∼0.6 for a printed material has been found in the film with a low in-plane thermal conductivity κF of ∼0.30 W m–1 K–1. Using this material for n-type legs, a flexible folded TE generator (flexTEG) of 13 thermocouples has been fabricated. The open-circuit voltage of the flexTEG for temperature differences of ΔT = 30 and 110 K is found to be 71.1 and 181.4 mV, respectively. Consequently, very high maximum output power densities pmax of 6.6 and 321 μW cm–2 are estimated for the temperature difference of ΔT = 30 K and ΔT = 110 K, respectively. The flexTEG has been demonstrated by wearing it on the lower wrist, which resulted in an output voltage of ∼72.2 mV for ΔT ≈ 30 K. Our results pave the way for widespread use in wearable devices.
In this paper, we describe the PALM model system 6.0. PALM (formerly an abbreviation for Parallelized Large-eddy Simulation Model and now an independent name) is a Fortran-based code and has been applied for studying a variety of atmospheric and oceanic boundary layers for about 20 years. The model is optimized for use on massively parallel computer architectures. This is a follow-up paper to the PALM 4.0 model description in Maronga et al. (2015). During the last years, PALM has been significantly improved and now offers a variety of new components. In particular, much effort was made to enhance the model with components needed for applications in urban environments, like fully interactive land surface and radiation schemes, chemistry, and an indoor model. This paper serves as an overview paper of the PALM 6.0 model system and we describe its current model core. The individual components for urban applications, case studies, validation runs, and issues with suitable input data are presented and discussed in a series of companion papers in this special issue.
In this report, we have studied field-effect transistors (FETs) using low-density alumina for electrolytic gating. Device layers have been prepared starting from the structured ITO glasses by printing the In 2 O 3 channels, low-temperature atomic layer deposition (ALD) of alumina (Al 2 O 3 ), and printing graphene top gates. The transistor performance could be deliberately changed by alternating the ambient humidity; furthermore, ID,ON/ID,OFF-ratios of up to seven orders of magnitude and threshold voltages between 0.66 and 0.43 V, decreasing with an increasing relative humidity between 40% and 90%, could be achieved. In contrast to the common usage of Al 2 O 3 as the dielectric in the FETs, our devices show electrolyte-typegating behavior. This is a result from the formation of protons on the Al 2 O 3 surfaces at higher humidities. Due to the very high local capacitances of the Helmholtz double layers at the channel surfaces, the operation voltage can be as low as 1 V. At low humidities (≤30%), the solid electrolyte dries out and the performance breaks down; however, it can fully reversibly be regained upon a humidity increase. Using ALD-derived alumina as solid electrolyte gating material, thus, allows low-voltage operation and provides a chemically stable gating material while maintaining low process temperatures. However, it has proven to be highly humidity-dependent in its performance.