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The number of use cases for autonomous vehicles is increasing day by day especially in commercial applications. One important application of autonomous vehicles can be found within the parcel delivery section. Here, autonomous cars can massively help to reduce delivery efforts and time by supporting the courier actively. One important component of course is the autonomous vehicle itself. Nevertheless, beside the autonomous vehicle, a flexible and secure communication architecture also is a crucial key component impacting the overall performance of such system since it is required to allow continuous interactions between the vehicle and the other components of the system. The communication system must provide a reliable and secure architecture that is still flexible enough to remain practical and to address several use cases. In this paper, a robust communication architecture for such autonomous fleet-based systems is proposed. The architecture provides a reliable communication between different system entities while keeping those communications secure. The architecture uses different technologies such as Bluetooth Low Energy (BLE), cellular networks and Low Power Wide Area Network (LPWAN) to achieve its goals.
Modeling of Random Variations in a Switched Capacitor Circuit based Physically Unclonable Function
(2020)
The Internet of Things (IoT) is expanding to a wide range of fields such as home automation, agriculture, environmental monitoring, industrial applications, and many more. Securing tens of billions of interconnected devices in the near future will be one of the biggest challenges. IoT devices are often constrained in terms of computational performance, area, and power, which demand lightweight security solutions. In this context, hardware-intrinsic security, particularly physically unclonable functions (PUFs), can provide lightweight identification and authentication for such devices. In this paper, random capacitor variations in a switched capacitor PUF circuit are used as a source of entropy to generate unique security keys. Furthermore, a mathematical model based on the ordinary least square method is developed to describe the relationship between random variations in capacitors and the resulting output voltages. The model is used to filter out systematic variations in circuit components to improve the quality of the extracted secrets.
Experimental Investigation of the Air Exchange Effectiveness of Push-Pull Ventilation Devices
(2020)
The increasing installation numbers of ventilation units in residential buildings are driven by legal objectives to improve their energy efficiency. The dimensioning of a ventilation system for nearly zero energy buildings is usually based on the air flow rate desired by the clients or requested by technical regulations. However, this does not necessarily lead to a system actually able to renew the air volume of the living space effectively. In recent years decentralised systems with an alternating operation mode and fairly good energy efficiencies entered the market and following question was raised: “Does this operation mode allow an efficient air renewal?” This question can be answered experimentally by performing a tracer gas analysis. In the presented study, a total of 15 preliminary tests are carried out in a climatic chamber representing a single room equipped with two push-pull devices. The tests include summer, winter and isothermal supply air conditions since this parameter variation is missing till now for push-pull devices. Further investigations are dedicated to the effect of thermal convection due to human heat dissipation on the room air flow. In dependence on these boundary conditions, the determined air exchange efficiency varies, lagging behind the expected range 0.5 < εa < 1 in almost all cases, indicating insufficient air exchange including short-circuiting. Local air exchange values suggest inhomogeneous air renewal depending on the distance to the indoor apertures as well as the temperature gradients between in- and outdoor. The tested measurement set-up is applicable for field measurements.
Many different methods, such as screen printing, gravure, flexography, inkjet etc., have been employed to print electronic devices. Depending on the type and performance of the devices, processing is done at low or high temperature using precursor- or particle-based inks. As a result of the processing details, devices can be fabricated on flexible or non-flexible substrates, depending on their temperature stability. Furthermore, in order to reduce the operating voltage, printed devices rely on high-capacitance electrolytes rather than on dielectrics. The printing resolution and speed are two of the major challenging parameters for printed electronics. High-resolution printing produces small-size printed devices and high-integration densities with minimum materials consumption. However, most printing methods have resolutions between 20 and 50 μm. Printing resolutions close to 1 μm have also been achieved with optimized process conditions and better printing technology.
The final physical dimensions of the devices pose severe limitations on their performance. For example, the channel lengths being of this dimension affect the operating frequency of the thin-film transistors (TFTs), which is inversely proportional to the square of channel length. Consequently, short channels are favorable not only for high-frequency applications but also for high-density integration. The need to reduce this dimension to substantially smaller sizes than those possible with today’s printers can be fulfilled either by developing alternative printing or stamping techniques, or alternative transistor geometries. The development of a polymer pen lithography technique allows scaling up parallel printing of a large number of devices in one step, including the successive printing of different materials. The introduction of an alternative transistor geometry, namely the vertical Field Effect Transistor (vFET), is based on the idea to use the film thickness as the channel length, instead of the lateral dimensions of the printed structure, thus reducing the channel length by orders of magnitude. The improvements in printing technologies and the possibilities offered by nanotechnological approaches can result in unprecedented opportunities for the Internet of Things (IoT) and many other applications. The vision of printing functional materials, and not only colors as in conventional paper printing, is attractive to many researchers and industries because of the added opportunities when using flexible substrates such as polymers and textiles. Additionally, the reduction of costs opens new markets. The range of processing techniques covers laterally-structured and large-area printing technologies, thermal, laser and UV-annealing, as well as bonding techniques, etc. Materials, such as conducting, semiconducting, dielectric and sensing materials, rigid and flexible substrates, protective coating, organic, inorganic and polymeric substances, energy conversion and energy storage materials constitute an enormous challenge in their integration into complex devices.
With economic weight shifting toward net zero, now is the time for ECAs, Exim-Banks, and PRIs to lead. Despite previous success, aligning global economic governance to climate goals requires additional activities across export finance and investment insurance institutions. The new research project initiated by Oxford University, ClimateWorks Foundation, and Mission 2020 including other practitioners and academics from institutions such as Atradius DSB, Columbia University, EDC, FMO and Offenburg University focuses on reshaping future trade and investment governance in light of climate action. The idea of a ‘Berne Union Net Zero Club’ is an important item in a potential package of reforms. This can include realigning mandates and corporate strategies, principles of intervention, as well as ECA, Exim-Bank and PRI operating models in order to accelerate net zero transformation. Full transparency regarding Berne Union members’ activities would be an excellent starting point. We invite all interested parties in the sector to come together to chart our own path to net zero
Nowadays, the wide majority of Europeans uses smartphones. However, touch displays are still not accessible by everyone. Individuals with deafblindness, for example, often face difculties in accessing vision-based touchscreens. Moreover, they typically have few fnancial resources which increases the need for customizable, low-cost assistive devices. In this work-in-progress, we present four prototypes made from low-cost, every-day materials, that make modern pattern lock mechanisms more accessible to individuals with vision impairments or even with deafblindness. Two out of four prototypes turned out to be functional tactile overlays for accessing digital 4-by-4 grids that are regularly used to encode dynamic dot patterns. In future work, we will conduct a user study investigating whether these two prototypes can make dot-based pattern lock mechanisms more accessible for individuals with visual impairments or deafblindness.
Electrolyte-gated thin-film transistors (EGTs) with indium oxide channel, and expected lifetime of three months, enable low-voltage operation (~1 V) in the field of printed electronics (PEs). The channel width of our printed EGTs is varied between 200 and 1000 μm, whereas a channel length between 10 and 100 μm is used. Due to the lack of uniform performance p-type metal oxide semiconductors, n-type EGTs and passive elements are used to design circuits. For logic gates, transistor-resistor logic has been employed so far, but depletion and enhancement-mode EGTs in a transistor-transistor logic boost the circuit performance in terms of delay and signal swing. In this article, the threshold voltage of the EGT, which determines the operation mode, is tuned through sizing of the EGTs channel geometry. The feasibility of both transistor operation modes is demonstrated for logic gates and ring oscillators. An inverter operating at a supply voltage of 1 V shows a maximum gain of 9.6 and a propagation delay time of 0.7 ms, which represents an improvement of ~ 2x for the gain and oscillation frequency, in comparison with the resistor-transistor logic design. Moreover, the power consumption is reduced by 6x.
Oxide semiconductors have the potential to increase the performance of inkjet printed microelectronic devices such as field-effect transistors (FETs), due to their high electron mobilities. Typical metal oxides are n-type semiconductors, while p-type oxides, although realizable, exhibit lower carriermobilities. Therefore, the circuit design based on oxide semiconductors is mostly in n-type logic only. Here we present an inkjet printed pn-diode based on p- and n-type oxide semiconductors.Copper oxide or nickel oxide is used as p-typesemiconductor whereas n-typesemiconductor is realized with indium oxide. Themeasurements show that the pn-diodes operate in the voltage window typical for printed electronics and the emission coefficient is 1.505 and 2.199 for the copper oxide based and nickel oxidebased pn-diode, respectively.Furthermore, a pn-diode model is developed and integrable into a circuit simulator.