Fabrication, Characterization and Simulation of Sputtered Pt/In-Ga-Zn-O Schottky Diodes for Low-Frequency Half-Wave Rectifier Circuit
- Amorphous In-Ga-Zn-O (IGZO) is a high-mobility semiconductor employed in modern thin-film transistors for displays and it is considered as a promising material for Schottky diode-based rectifiers. Properties of the electronic components based on IGZO strongly depend on the manufacturing parameters such as the oxygen partial pressure during IGZO sputtering and post-deposition thermal annealing. InAmorphous In-Ga-Zn-O (IGZO) is a high-mobility semiconductor employed in modern thin-film transistors for displays and it is considered as a promising material for Schottky diode-based rectifiers. Properties of the electronic components based on IGZO strongly depend on the manufacturing parameters such as the oxygen partial pressure during IGZO sputtering and post-deposition thermal annealing. In this study, we investigate the combined effect of sputtering conditions of amorphous IGZO (In:Ga:Zn=1:1:1) and post-deposition thermal annealing on the properties of vertical thin-film Pt-IGZO-Cu Schottky diodes, and evaluated the applicability of the fabricated Schottky diodes for low-frequency half-wave rectifier circuits. The change of the oxygen content in the gas mixture from 1.64% to 6.25%, and post-deposition annealing is shown to increase the current rectification ratio from 10 5 to 10 7 at ±1 V, Schottky barrier height from 0.64 eV to 0.75 eV, and the ideality factor from 1.11 to 1.39. Half-wave rectifier circuits based on the fabricated Schottky diodes were simulated using parameters extracted from measured current-voltage and capacitance-voltage characteristics. The half-wave rectifier circuits were realized at 100 kHz and 300 kHz on as-fabricated Schottky diodes with active area of 200 μm × 200 μm, which is relevant for the near-field communication (125 kHz - 134 kHz), and provided the output voltage amplitude of 0.87 V for 2 V supply voltage. The simulation results matched with the measurement data, verifying the model accuracy for circuit level simulation.…
Document Type: | Article (reviewed) |
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Zitierlink: | https://opus.hs-offenburg.de/4343 | Bibliografische Angaben |
Title (English): | Fabrication, Characterization and Simulation of Sputtered Pt/In-Ga-Zn-O Schottky Diodes for Low-Frequency Half-Wave Rectifier Circuit |
Author: | Veronika Ulianova, Farhan Rasheed, Sami Bolat, Galo Torres Sevilla, Yurii Didenko, Xiaowei FengGND, Ivan Shorubalko, Dominik Bachmann, Dmytro Tatarchuk, Mehdi Baradaran Tahoori, Jasmin Aghassi-HagmannORCiDGND, Yaroslav Romanyuk |
Year of Publication: | 2020 |
Creating Corporation: | IEEE |
First Page: | 111783 |
Last Page: | 111790 |
Parent Title (English): | IEEE Access |
Volume: | 8 |
ISSN: | 2169-3536 |
DOI: | https://doi.org/10.1109/ACCESS.2020.3002267 |
Language: | English | Inhaltliche Informationen |
Institutes: | Fakultät Elektrotechnik, Medizintechnik und Informatik (EMI) (ab 04/2019) |
Institutes: | Bibliografie | Formale Angaben |
Open Access: | Closed Access |
Licence (German): | Creative Commons - CC BY - Namensnennung 4.0 International |