Nonquasi-Static Capacitance Modeling and Characterization for Printed Inorganic Electrolyte-Gated Transistors in Logic Gates
- Printed electronics can benefit from the deployment of electrolytesas gate insulators,which enables a high gate capacitance per unit area (1–10 μFcm−2) due to the formation of electrical double layers (EDLs). Consequently, electrolyte-gated field-effect transistors (EGFETs) attain high-charge carrier densities already in the subvoltage regime, allowing for low-voltage operation of circuits andPrinted electronics can benefit from the deployment of electrolytesas gate insulators,which enables a high gate capacitance per unit area (1–10 μFcm−2) due to the formation of electrical double layers (EDLs). Consequently, electrolyte-gated field-effect transistors (EGFETs) attain high-charge carrier densities already in the subvoltage regime, allowing for low-voltage operation of circuits and systems. This article presents a systematic study of lumped terminal capacitances of printed electrolyte-gated transistors under various dc bias conditions. We perform voltage-dependent impedancemeasurements and separate extrinsic components from the lumped terminal capacitance. The proposed Meyer-like capacitance model, which also accounts for the nonquasi-static (NQS) effect, agrees well with experimental data. Finally, to verify the model, we implement it in Verilog-A and simulate the transient response of an inverter and a ring oscillator circuit. Simulation results are in good agreement with the measurement data of fabricated devices.…
Document Type: | Article (reviewed) |
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Zitierlink: | https://opus.hs-offenburg.de/3974 | Bibliografische Angaben |
Title (English): | Nonquasi-Static Capacitance Modeling and Characterization for Printed Inorganic Electrolyte-Gated Transistors in Logic Gates |
Author: | Xiaowei FengGND, Gabriel Cadilha Marques, Farhan Rasheed, Mehdi Baradaran Tahoori, Jasmin Aghassi-HagmannORCiDGND |
Year of Publication: | 2019 |
Creating Corporation: | IEEE |
First Page: | 5272 |
Last Page: | 5277 |
Parent Title (English): | IEEE Transactions on Electron Devices |
Volume: | 66 |
Issue: | 12 |
ISSN: | 1557-9646 (Online) |
ISSN: | 0018-9383 (Print) |
DOI: | https://doi.org/10.1109/TED.2019.2947787 |
Language: | English | Inhaltliche Informationen |
Institutes: | Fakultät Elektrotechnik, Medizintechnik und Informatik (EMI) (ab 04/2019) |
Institutes: | Bibliografie | Formale Angaben |
Open Access: | Closed Access |
Licence (German): | Urheberrechtlich geschützt |