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Compact modeling of inkjet printed, high mobility, electrolyte-gated transistors

  • High mobility, electrolyte-gated transistors (EGTs) show high DC performance at low voltages (< 2 V). To model those EGTs, we have used different models for the below and the above threshold regime with appropriate interpolation to ensure continuity and smoothness over all regimes. This empirical model matches very well with our measured results obtained by the electrical characterization of EGTs.High mobility, electrolyte-gated transistors (EGTs) show high DC performance at low voltages (< 2 V). To model those EGTs, we have used different models for the below and the above threshold regime with appropriate interpolation to ensure continuity and smoothness over all regimes. This empirical model matches very well with our measured results obtained by the electrical characterization of EGTs.show moreshow less

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Metadaten
Author:Gabriel Cadilha Marques, Suresh Kumar Garlapati, Simone Dehm, Subho Dasgupta, Jasmin Aghassi-HagmannORCiDGND, Mehdi Baradaran Tahoori
Creating Corporation:Hochschule Karlsruhe
Year of Publication:2016
Language:English
Tag:Transistor
Parent Title (German):Tagungsband zum Workshop der Multiprojekt-Chip-Gruppe Baden-Württemberg, Karlsruhe, 5. Februar 2016
Volume:55
ISSN:1868-9221
First Page:29
Last Page:34
Document Type:Conference Proceeding
Open Access:Frei zugänglich
Institutes:Bibliografie
Release Date:2018/02/02
Licence (German):License LogoEs gilt das UrhG
URL:https://www.mpc-gruppe.de/de/workshopbaende.html